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Revista Científica General José María Córdova

versión impresa ISSN 1900-6586

Resumen

SALCEDO REYES, Juan Carlos. Fabrication and characterization of Light-Emitting Diodes with green-blue region emission. Rev. Cient. Gen. José María Córdova [online]. 2017, vol.15, n.19, pp.337-347. ISSN 1900-6586.  https://doi.org/10.21830/19006586.88.

On October 7th 2014, it was announced, by the Nobel committee, that the 2014 Physics Nobel prize was awarded to the Japanese Isamu Akasaki, Hiroshi Amano, and Shuji Nakamura for their development of LEDs with emission of blue-green visible light (Nakamura, Mukai & Senoh, 1991). The importance of this finding is based on the blue-LED potential applications as an efficient and ecological source of light, as well as on the development of the structure known as quantum wells.

That is how the present development of electronic and optoelectronics devices, whose active region is composed of quantic wells, is strongly modulated by the capacity to construct such structures with high crystalline quality, chemical composition control, and great reproducibility. In this way, epitaxial growth techniques represent, in the field of the nano-electronics, the technological developmental cornerstone. In this work different chemical and physical processes that take place during the growth of ZnXCd1-XSe ultra-thin quantum wells (UTQW) by Atomic Layer Epitaxy (ALE) were studied. The kinetic process of Zn adsorption in terms of first order reaction equation is analyzed. The adsorption of Zn into the crystalline structure defines the chemical composition of the alloy as a function of the substrate temperature (Ts) and of the Zinc flux. In this work, values for the activation energy, pre-exponential factor, and Zn adsorption constant were obtained. The chemical composition in UTQW is one of the most important parameters for the fabrication of blue-LEDs, since it defines the wavelength of the emission in potential optoelectronic applications, in particular in blue LED and UV development.

Palabras clave : Ordered alloys; Atomic layer epitaxy; Semiconductor Quantum wells; Photoluminiscence, Light emitting diodes.

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