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Revista Facultad de Ingeniería Universidad de Antioquia
versión impresa ISSN 0120-6230
Resumen
URIBE-ALZATE, José Ignacio; OSORIO-VELEZ, Jaime Alberto; JARAMILLO-ISAZA, Franklin y CALLE-MONTOYA, Juan Esteban. Power deposition influence on the electrical and optical properties of Sn1-xO2Nbx thin films obtained by sputtering. Rev.fac.ing.univ. Antioquia [online]. 2016, n.80, pp.152-158. ISSN 0120-6230. https://doi.org/10.17533/udea.redin.n80a16.
In a solid, the electrical conductivity and optical transparency seem to be two contradictory physical properties. Conductive materials are opaque, and transparent solids are electrical insulators. Combinations of these two physical properties in a material make it appropriate for application in many optoelectronic devices. The coincidence of these two properties has been mainly ascribed to point defects in the crystal lattice. In this work, we performed structural, electrical and optical characterization of thin films of one of the most promising transparent conductive oxides Sn1-xO2Nbx. The films were grown on glass substrates by RF magnetron sputtering technique. As the deposition power was varied, it was found that the electrical conductivity of the films increased with increasing power deposition, and they showed a preferential growth in the (200) direction. All films exhibited optical transmittance in the visible range larger than 80%.
Palabras clave : Magnetron sputtering; thin film; transparent conductors.