Resumo

PEREZ TABORDA, Jaime Andrés; RIASCOS LANDAZURI, Henry; JIMENEZ GARCIA, Francy Nelly  e  CAICEDO ANGULO, Julio César. STRUCTURAL AND MORPHOLOGICAL ANALYSIS OF ALUMINUM NITRIDE FILMS OF OBTAINED BY PULSED LASER DEPOSITION. Cienc. Ing. Neogranad. [online]. 2010, vol.20, n.2, pp.107-115. ISSN 0124-8170.

This paper gives the preliminary results about aluminum nitride (AIN) nanoestructured films deposited by pulsed laser deposition (PLD) technique, by using laser Nd:YAG (λ=1064), which hit a target of high purity aluminum (4N) in a nitrogen atmosphere. We used glass slide, Si₃N₄ (100) and Si (100) as substrates. The deposition time was 15 minutes at laser fluence 7 J/cm² and room temperature. The thicknesses of thin films were 50 nm measured with a proflometer. The influence of nitrogen on thin films was studied by changing room gas pressure between 3 and 4 mTorr. Also we have studied the influence of substrate on morphological properties of AIN thin films. The film nanostructure was determined by scanning electron microscopy (SEM), atomic force microscopy (AFM) -the chemical composition- using the technique of energy dispersive X-ray (EDX). The crystal structure was examined with X-Ray Diffraction (XRD) to a 4 mTorr film on a Si₃N₄ (100) substrate giving a polycrystalline structure with reflections of planes (002), linked to the wurtzite-like structure of AIN.

Palavras-chave : aluminum nitride (AIN); pulsed laser deposition (PLD); XRD; SEM; EDX; proflometer; AFM.

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